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Metal-insulator transition in the In/Si(111) surface

Sampsa Riikonen·Andres Ayuela·Daniel Sanchez-Portal
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Abstract

The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [New J. of Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.

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Sampsa Riikonen, Andres Ayuela, Daniel Sanchez-Portal. 2005-12-23. Metal-insulator transition in the In/Si(111) surface. https://doi.org/10.1016/j.susc.2006.01.092

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