arXiv subjects

Andres Ayuela

Publications and source records attributed to Andres Ayuela.

12 recordsLinked to original sources

arXiv2025

Nickel Doping Unlocks Ambient-condition Photostability in Individual Cesium Lead Bromide Perovskite Quantum Dots

Developing efficient single-photon sources is fundamental to advancing photonic quantum technologies. In particular, achieving scalable, cost-effective, stable, high-rate, and high-purity single-photon emission at ambient conditions is paramount for free-space quantum communication. However, fulfilling all the requirements simultaneously under ambient conditions has remained a significant challenge. Here, the scalable, cost-effective ambient condition synthesis of nickel doped (Ni doped) CsPbBr3 perovskite quantum dots (NPQDs) is presented using a modified ligand-assisted reprecipitation (LARP) method. The resulting individual NPQDs demonstrate remarkable photostability, sustaining their performance for over 10 minutes under ambient conditions with environment humidity of ~55%, and exhibit exceptional single-photon purity (>99%) with a narrow emission linewidth (~70 meV). The remarkable photostability could be attributed to the spatial localization of exciton by Ni atoms on the surface of the nanocrystal, reducing its interaction with the environment. Our results demonstrated that NPQDs with outstanding combinations of quantum emitting properties can be both synthesized and operated at ambient conditions. These findings mark a significant step toward scalable, cost-effective quantum light sources for real-world applications, paving the way for robust quantum communication systems and devices.

cond-mat.mtrl-sci↗

arXiv2025

Long-lived Zone-boundary Magnons in an Antiferromagnet

Antiferromagnetic (AFM) insulators exhibit many desirable features for spintronic applications such as fast dynamics in the THz range and robustness to fluctuating external fields. However, large damping typically associated with THz magnons presents a serious challenge for THz magnonic applications. Here, we report long-lived short-wavelength zone boundary magnons in the honeycomb AFM insulator CoTiO3, recently found to host topological magnons. We find that its zone-boundary THz magnons exhibit longer lifetimes than its zone-center magnons. This unusual momentum-dependent long magnon lifetime originates from several factors including the antiferromagnetic order, exchange anisotropy, a finite magnon gap, and magnon band dispersion. Our work suggests that magnon-magnon interaction may not be detrimental to magnon lifetimes and should be included in future searches for topological magnons.

cond-mat.mes-hall↗

arXiv2025

Light-induced reorientation transition in an antiferromagnetic semiconductor

Due to the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them quite difficult to control, and the development of novel methods to manipulate these systems with external stimuli is a fundamental goal of antiferromagnetic spintronics. In this work, we report evidence for a metastable reorientation of the order parameter in an antiferromagnetic semiconductor triggered by an ultrafast quench of the equilibrium order via photoexcitation above the band gap. The metastable state forms less than 10 ps after the excitation pulse, and persists for longer than 150 ps before decaying to the ground state via thermal fluctuations. Importantly, this transition cannot be induced thermodynamically, and requires the system to be driven out of equilibrium. Broadly speaking, this phenomenology is ultimately the result of large magnetoelastic coupling in combination with a relatively low symmetry of the magnetic ground state. Since neither of these properties are particularly uncommon in magnetic materials, the observations presented here imply a generic path toward novel device technology enabled by ultrafast dynamics in antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2019

Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers

The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one another and therefore, the seemingly trivial question how reliable electrical contact can be made to either stacking order can a priori not be answered easily. Here, we show that manufacturing metal contacts to multilayer graphene can move solitons by several $μ$m, unidirectionally enlarging Bernal domains due to arising mechanical strain. Furthermore, we also find that during dry transfer of multilayer graphene onto hexagonal Boron Nitride, such a transformation can happen. Using density functional theory modeling, we corroborate that anisotropic deformations of the multilayer graphene lattice decrease the rhombohedral stacking stability. Finally, we have devised systematics to avoid soliton movement, and how to reliably realize contacts to both stacking configurations.

cond-mat.mes-hall↗

arXiv2016

Existence of nontrivial topologically protected states at grain boundaries in bilayer graphene: signatures and electrical switching

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because they are topologically protected, valley-polarized and give rise to conductance along the domain wall. Current theoretical models predict the appearance of such states only at domain walls, which preserve the sublattice order. Here we show that the appearance of the topologically protected states in stacking domain walls can be much more common in bilayer graphene, since they can also emerge in unexpected geometries, e.g., at grain boundaries with atomic-scale topological defects. We focus on a bilayer system in which one of the layers contains a line of octagon-double pentagon defects, that mix graphene sublattices. We demonstrate that gap states are preserved even with pentagonal defects. Remarkably, unlike previous predictions, the number of gap states changes by inverting the gate polarization, yielding an asymmetric conductance along the grain boundary under gate reversal. This effect, linked to defect states, should be detectable in transport measurements and could be exploited in electrical switches.

cond-mat.mes-hall↗

arXiv2014

Low coverage surface diffusion in complex energy landscapes: Analytical solution and application to intercalation in topological insulators

A general expression is introduced for the tracer diffusivity in complex periodic energy landscapes with more than one distinct hop rate in two- and three-dimensional diluted systems (low coverage, single-tracer limit). For diffusion in two dimensions, a number of formulas are presented for complex combinations of hop rates in systems with triangular, rectangular and square symmetry. The formulas provide values in excellent agreement with Kinetic Monte Carlo simulations, concluding that the diffusion coefficient can be directly determined from the proposed expressions without performing such simulations. Based on the diffusion barriers obtained from first principles calculations and a physically-meaningful estimate of the attempt frequencies, the proposed formulas are used to analyze the diffusion of Cu, Ag and Rb adatoms on the surface and within the van der Waals (vdW) gap of a model topological insulator, Bi$_{2}$Se$_{3}$. Considering the possibility for adsorbate intercalation from the terraces to the vdW gaps at morphological steps, we infer that, at low coverage and room temperature: (i) a majority of the Rb atoms bounce back at the steps and remain on the terraces, (ii) Cu atoms mostly intercalate into the vdW gap, the remaining fraction staying at the steps, and (iii) Ag atoms essentially accumulate at the steps and gradually intercalate into the vdW gap. These conclusions are in good qualitative agreement with previous experiments.

cond-mat.mtrl-sci↗

arXiv2013

First-Principles Study of the Electronic and Magnetic Properties of Defects in Carbon Nanostructures

Understanding the magnetic properties of graphenic nanostructures is instrumental in future spintronics applications. These magnetic properties are known to depend crucially on the presence of defects. Here we review our recent theoretical studies using density functional calculations on two types of defects in carbon nanostructures: Substitutional doping with transition metals, and sp$^3$-type defects created by covalent functionalization with organic and inorganic molecules. We focus on such defects because they can be used to create and control magnetism in graphene-based materials. Our main results are summarized as follows: i)Substitutional metal impurities are fully understood using a model based on the hybridization between the $d$ states of the metal atom and the defect levels associated with an unreconstructed D$_{3h}$ carbon vacancy. We identify three different regimes, associated with the occupation of distinct hybridization levels, which determine the magnetic properties obtained with this type of doping; ii) A spin moment of 1.0 $μ_B$ is always induced by chemical functionalization when a molecule chemisorbs on a graphene layer via a single C-C (or other weakly polar) covalent bond. The magnetic coupling between adsorbates shows a key dependence on the sublattice adsorption site. This effect is similar to that of H adsorption, however, with universal character; iii) The spin moment of substitutional metal impurities can be controlled using strain. In particular, we show that although Ni substitutionals are non-magnetic in flat and unstrained graphene, the magnetism of these defects can be activated by applying either uniaxial strain or curvature to the graphene layer. All these results provide key information about formation and control of defect-induced magnetism in graphene and related materials.

cond-mat.mes-hall↗

arXiv2009

First-Principles Study of Substitutional Metal Impurities in Graphene: Structural, Electronic and Magnetic Properties

We present a theoretical study using density functional calculations of the structural, electronic and magnetic properties of 3d transition metal, noble metal and Zn atoms interacting with carbon monovacancies in graphene. We pay special attention to the electronic and magnetic properties of these substitutional impurities and found that they can be fully understood using a simple model based on the hybridization between the states of the metal atom, particularly the d shell, and the defect levels associated with an unreconstructed D3h carbon vacancy. We identify three different regimes associated with the occupation of different carbon-metal hybridized electronic levels: (i) bonding states are completely filled for Sc and Ti, and these impurities are non-magnetic; (ii) the non-bonding d shell is partially occupied for V, Cr and Mn and, correspondingly, these impurties present large and localized spin moments; (iii) antibonding states with increasing carbon character are progressively filled for Co, Ni, the noble metals and Zn. The spin moments of these impurities oscillate between 0 and 1 Bohr magnetons and are increasingly delocalized. The substitutional Zn suffers a Jahn-Teller-like distortion from the C3v symmetry and, as a consequence, has a zero spin moment. Fe occupies a distinct position at the border between regimes (ii) and (iii) and shows a more complex behavior: while is non-magnetic at the level of GGA calculations, its spin moment can be switched on using GGA+U calculations with moderate values of the U parameter.

cond-mat.mes-hall↗

arXiv2006

High Curie temperatures in (Ga,Mn)N from Mn clustering

The effect of microscopic Mn cluster distribution on the Curie temperature (Tc) is studied using density-functional calculations. We find that the calculated Tc depends crucially on the microscopic cluster distribution, which can explain the abnormally large variations in experimental Tc values from a few K to well above room temperature. The partially dimerized Mn_2-Mn_1 distribution is found to give the highest Tc > 500 K, and in general, the presence of the Mn_2 dimer has a tendency to enhance Tc. The lowest Tc values close to zero are obtained for the Mn_4-Mn_1 and Mn_4-Mn_3 distributions.

cond-mat.mtrl-sci↗

arXiv2005

Metal-insulator transition in the In/Si(111) surface

The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [New J. of Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.

cond-mat.mtrl-sci↗

arXiv1999

Calculation of The Band Gap Energy and Study of Cross Luminescence in Alkaline-Earth Dihalide Crystals

The band gap energy as well as the possibility of cross luminescence processes in alkaline-earth dihalide crystals have been calculated using the ab initio Perturbed-Ion (PI) model. The gap is calculated in several ways: as a difference between one-electron energy eigenvalues and as a difference between total energies of appropriate electronic states of the crystal, both at the HF level and with inclusion of Coulomb correlation effects. In order to study the possibility of ocurrence of cross luminescence in these materials, the energy difference between the valence band and the upmost core band for some representative crystals has been calculated. Both calculated band gap energies and cross luminescence predictions compare very well with the available experimental results.

cond-mat.mtrl-sci↗

arXiv1998

Lattice Distortions Around a Tl+ Impurity in NaI:Tl+ and CsI:Tl+ Scintillators. An Ab Initio Study Involving Large Active Clusters

Ab initio Perturbed Ion cluster-in-the-lattice calculations of the impurity centers NaI:Tl+ and CsI:Tl+ are pressented. We study several active clusters of increasing complexity and show that the lattice relaxation around the Tl+ impurity implies the concerted movement of several shells of neighbors. The results also reveal the importance of considering a set of ions that can respond to the geometrical displacements of the inner shells by adapting selfconsistently their wave functions. Comparison with other calculations involving comparatively small active clusters serves to assert the significance of our conclusions. Contact with experiment is made by calculating absorption energies. These are in excellent agreement with the experimental data for the most realistic active clusters considered.

cond-mat.mtrl-sci↗