Control of spin relaxation in semiconductor double quantum dots

Y. Y. Wang; M. W. Wu

doi:10.1103/physrevb.74.165312

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arXiv · cond-mat/0601028

Control of spin relaxation in semiconductor double quantum dots

Y. Y. Wang·M. W. Wu

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Abstract

We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.

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Y. Y. Wang, M. W. Wu. 2006-07-13. Control of spin relaxation in semiconductor double quantum dots. https://doi.org/10.1103/physrevb.74.165312

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