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Hole-LO phonon interaction in InAs/GaAs quantum dots

Vanessa Preisler·Robson Ferreira·Sophie Hameau·Louis-Anne De Vaulchier·Yves Guldner·Marcin L Sadowski·Aristide Lemaître
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Abstract

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fröhlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states.

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Vanessa Preisler, Robson Ferreira, Sophie Hameau, Louis-Anne De Vaulchier, Yves Guldner, Marcin L Sadowski, Aristide Lemaître. 2006-01-31. Hole-LO phonon interaction in InAs/GaAs quantum dots. https://doi.org/10.1103/physrevb.72.115309

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