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Hyperfine interaction and magnetoresistance in organic semiconductors

Y. Sheng·D. T. Nguyen·G. Veeraraghavan·Ö. Mermer·M. Wohlgenannt·U. Scherf
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Abstract

We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.

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Y. Sheng, D. T. Nguyen, G. Veeraraghavan, Ö. Mermer, M. Wohlgenannt, U. Scherf. 2006-02-10. Hyperfine interaction and magnetoresistance in organic semiconductors. https://doi.org/10.1103/physrevb.74.045213

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