arXiv subjects

Y. Sheng

Publications and source records attributed to Y. Sheng.

8 recordsLinked to original sources

arXiv2026

Inner post-Lie algebras and inner post-groups

In this paper, using extension theory and cohomological approach we introduce the notion of the obstruction class for an inner post-Lie algebra being induced by a Rota-Baxter operator, and show that an inner post-Lie algebra is induced by a Rota-Baxter operator if and only if the obstruction class is trivial. Similarly, we introduce the notion of the obstruction class for an inner post-group being induced by a Rota-Baxter operator, and prove a parallel result. Finally, we give some applications of inner post-Lie algebras and inner post-groups.

math.RA↗

arXiv2024

Discovering High-$z$ BL Lacs Using Swift/UVOT and SARA Observations with the Dropout Technique

Measuring spectroscopic redshifts for BL Lacertae (BL Lac) objects, a class of blazar, is challenging because their optical spectrum lacks, or has weak, emission lines ( equivalent width $\leqslant5\AA$). In this situation, alternative techniques are necessary for the estimation of distances to these sources. In this paper, we estimate the redshift by the photometric dropout technique for a sample of 64 blazars (59 BL Lacs and five blazar candidates of uncertain type). Two telescopes are utilized to observe the sample. The Ultraviolet/Optical Telescope (UVOT) on board {\it Swift} ({\it Swift}/UVOT) observes sources in $uvw2,\ uvm2,\ uvw1,\ u,\ b,\ v$ filters, while the ground-based telescopes SARA-CT/RM observed sources in $g',\ r,' \ i',\ z'$ filters. We fit the photometric data with the LePHARE package and report four new high-$z$ ($z>1.3$) BL Lacs at $2.03^{+0.07}_{-0.05}$, $1.84^{+0.10}_{-0.03}$, $2.04^{+0.16}_{-0.14}$, and $2.93^{+0.01}_{-0.04}$ as well as upper limits for 50 sources. This work increased the number of high-$z$ BL Lacs found by this method up to 23. The high-$z$ sources are discussed in the context of the cosmic gamma-ray horizon, blazar sequence, Fermi blazar divide, and masquerading BL Lacs.

astro-ph.HE↗

arXiv2022

Revealing high-z Fermi-LAT BL Lacs using Swift and SARA data with photometric analysis

BL Lacertae (BL Lac) objects are a subclass of blazar, distinguished by their featureless optical spectrum. The featureless spectrum presents a challenge in measuring the redshift of the BL Lacs. In this paper, we measure the redshift of BL Lacs using the photometric dropout technique. The space-based telescope \emph{Swift} and the ground-based SARA telescopes are employed to provide magnitudes in the $uvw2,\ uvm2,\ uvw1,\ u,\ b,\ v,\ g',\ r',\ i',\ z'$ filters. We observe 60 BL Lacs and report reliable redshift upper limits for 41 of them. We discover three new high-$z$ BL Lacs ($z>1.3$) at $1.74_{-0.08}^{+0.05}$, $1.88_{-0.03}^{+0.07}$, and $2.10_{-0.04}^{+0.03}$, bringing the number of high-$z$ BL Lacs found by this method up to 19. Discussions are made on the implications for the blazar sequence, the \emph{Fermi} blazar divide, and the gamma-ray horizon based on an analysis of the 4LAC catalog and all high-$z$ BL Lacs found with the photo-$z$ technique.

astro-ph.HE↗

arXiv2018

Current-induced four-state magnetization switching by spin-orbit torques in perpendicular ferromagnetic trilayers

We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt. Making use of the opposite spin current at the top and bottom surface of the middle Pt layer, magnetization of both Co layers can be switched oppositely by the spin-orbit torques with different critical switching currents. By changing the current pulse forms through the device, the four magnetic states memory was demonstrated. Our device provides a new idea for the design of low power and high density spin-orbit torque devices.

physics.app-ph↗

arXiv2015

Longitudinal Spin Seebeck Effect in Silver Strip on CoFe Film

We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared the experimental results between the Ag/CoFe/Cu strip and Cu/CoFe/Cu strip, where two samples processed with the heating power instead of the temperature difference through the thin CoFe film. The respective contributions of the ANE and SSE to thermal voltage were determined, and they have the ratio of 4:1. The spin current injected through CoFe/Ag interface is calculated to be 1.76 mA/W.

cond-mat.mtrl-sci↗

arXiv2007

Device-spectroscopy of magnetic field effects in a polyfluorene organic light-emitting diode

We perform charge-induced absorption and electroluminescence spectroscopy in a polyfluorene organic magnetoresistive device. Our experiments allow us to measure the singlet exciton, triplet exciton and polaron densities in a live device under an applied magnetic field, and to distinguish between three different models that were proposed to explain organic magnetoresistance. These models are based on different spin-dependent interactions, namely exciton formation, triplet exciton-polaron quenching and bipolaron formation. We show that the singlet exciton, triplet exciton and polaron densities and conductivity all increase with increasing magnetic field. Our data are inconsistent with the exciton formation and triplet-exciton polaron quenching models.

cond-mat.soft↗

arXiv2006

Hyperfine interaction and magnetoresistance in organic semiconductors

We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.

cond-mat.soft↗

arXiv2005

Large magnetoresistance in $π$-conjugated semiconductor thin film devices

Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields, $B < 100mT$. We observed large negative or positive magnetoresistance (up to 10% at 300K and 10mT) depending on material and device operating conditions. We compare the results obtained in devices made from different materials with the goal of providing a comprehensive picture of the experimental data. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.

cond-mat.mtrl-sci↗