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Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films

D. Matthey·N. Reyren·T. Schneider·J. -M. Triscone
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Abstract

We explore the relationship between the critical temperature, T_c, the mobile areal carrier density, n_2D, and the zero temperature magnetic in-plane penetration depth, lambda_ab(0), in very thin underdoped NdBa2Cu3O{7-delta} films near the superconductor to insulator transition using the electric field effect technique. We observe that T_c depends linearly on both, n_2D and lambda_ab(0), the signature of a quantum superconductor to insulator (QSI) transition in two dimensions with znu-bar where z is the dynamic and nu-bar the critical exponent of the in-plane correlation length.

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D. Matthey, N. Reyren, T. Schneider, J. -M. Triscone. 2006-09-29. Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films. https://doi.org/10.1103/physrevlett.98.057002

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