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Stark Tuning of Donor Electron Spins in Silicon

Forrest R. Bradbury·Alexei M. Tyryshkin·Guillaume Sabouret·Jeff Bokor·Thomas Schenkel·Stephen A. Lyon
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Abstract

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

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Forrest R. Bradbury, Alexei M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, Stephen A. Lyon. 2006-03-12. Stark Tuning of Donor Electron Spins in Silicon. https://doi.org/10.1103/physrevlett.97.176404

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