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Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

K. Hamaya·S. Masubuchi·K. Hirakawa·S. Ishida·Y. Arakawa·K. Sawano·Y. Shiraki·T. Machida
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Abstract

We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.

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K. Hamaya, S. Masubuchi, K. Hirakawa, S. Ishida, Y. Arakawa, K. Sawano, Y. Shiraki, T. Machida. 2006-03-16. Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system. https://doi.org/10.1103/physrevb.73.121304

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