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S. Masubuchi

Publications and source records attributed to S. Masubuchi.

11 recordsLinked to original sources

Photo- and thermally-induced huge layer decoupling in twisted bilayer WSe$_2$

Twisted bilayer systems host a wealth of emergent phenomena, such as flat-band superconductivity, ferromagnetism, and ferroelectricity, arising from moir\'e superlattices and unconventional interlayer coupling. Despite their central role, direct and quantitative access to the three-dimensional atomic arrangement in these systems has remained elusive due to their nanoscale dimensions. Here, we introduce an automated dark-field electron tomography technique that enables quantitative three-dimensional structural analysis of atomically thin materials with sub-\r{A} precision. By applying this method to twisted bilayer WSe$_2$, we precisely visualize the twist-angle-dependent structural relaxation appearing as the AB/BA stacking domains separated by 10-20 nm domain walls.In the marginally twisted region ($\theta \leq 0.1^\circ$), we uncover a significant expansion of the interlayer spacing compared to the bulk configuration, exceeding 0.1 \r{A}, along with a remarkable temperature-driven interlayer decoupling. Ultrafast measurements further reveal optically induced interlayer separation of ~0.2 \r{A} on the picosecond timescale, attributed to transient exciton formation. These findings not only establish a powerful approach for visualizing hidden out-of-plane structures in atomically thin micro-flake materials, but also uncover the intrinsic fragility and dynamical tunability of interlayer coupling in moir\'e-engineered 2-dimensional materials.

cond-mat.mes-hall

180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor

We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.

cond-mat.mes-hall

Direct observation of the layer-number-dependent electronic structure in few-layer WTe2

When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure.

cond-mat.mtrl-sci

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.

cond-mat.mes-hall

Dynamic nuclear polarization and Knight shift measurements in a breakdown regime of integer quantum Hall effect

Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin polarity flips nuclear spins through the hyperfine interaction. The polarized nuclear spins reduce the spin-splitting energy and accelerate the QHE breakdown. The Knight shift of the nuclear spins is also measured by tuning electron density during the irradiation of radio-frequency magnetic fields.

cond-mat.mes-hall

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.

cond-mat.mes-hall

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

cond-mat.mes-hall

Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect

We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically polarizes nuclear spins through the hyperfine interaction. The polarized nuclear spins in turn accelerate the QHE breakdown, leading to hysteretic voltage-current characteristics of the quantum Hall conductor.

cond-mat.mes-hall

Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.

cond-mat.mes-hall

Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.

cond-mat.mes-hall

Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.

cond-mat.mes-hall