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Vertical quantum wire realized with double cleaved-edge overgrowth

S. F. Roth·H. J. Krenner·D. Schuh·M. Bichler·M. Grayson
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Abstract

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.

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S. F. Roth, H. J. Krenner, D. Schuh, M. Bichler, M. Grayson. 2006-04-04. Vertical quantum wire realized with double cleaved-edge overgrowth. https://doi.org/10.1063/1.2222347

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