arXiv subjects

S. F. Roth

Publications and source records attributed to S. F. Roth.

3 recordsLinked to original sources

arXiv2007

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

A doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow post-illumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring post-illumination annealing to T = 30 K to saturate the PPC. Dark and post-illumination doping efficiencies are reported.

cond-mat.mes-hall↗

arXiv2006

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.

cond-mat.mes-hall↗

arXiv2005

Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n- and p-type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n- and p-type, with several higher-order fractions evident in n-type modulation-doped samples.

cond-mat.mes-hall↗