arXiv · cond-mat/0605753
Correlation effects in the density of states of annealed GaMnAs
Abstract
We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of states of GaMnAs. Our experiment shows that low temperature annealing is a direct empirical tool that modifies the correlation gap and thus the electron-electron interaction. Consistent with previous results on boron-doped silicon we find, as a function of voltage, a transition across the phase boundary delimiting the direct and exchange correlation regime.
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S. Russo, T. M. Klapwijk, W. Schoch, W. Limmer. 2006-10-26. Correlation effects in the density of states of annealed GaMnAs. https://doi.org/10.1103/physrevb.75.033308
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