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Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

R. G. Mani·W. B. Johnson·V. Umansky·V. Narayanamurti·K. Ploog
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Abstract

An experimental study of the high mobility GaAs/AlGaAs system at large-$ν$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.

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R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, K. Ploog. 2006-06-20. Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect. https://arxiv.org/abs/cond-mat/0606517

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