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Temperature dependent electronic correlation effects in GdN

A. Sharma·W. Nolting
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Abstract

We investigate temperature dependent electronic correlation effects in the conduction bands of Gadolinium Nitride (GdN) based on the combination of many body analysis of the multi-band Kondo lattice model and the first principles TB-LMTO bandstructure calculations. The physical properties like the quasi-particle density of states (Q-DOS), spectral density (SD) and quasi-particle bandstructure (Q-BS) are calculated and discussed. The results can be compared with spin and angle resolved inverse photoemission spectroscopy (ARIPS) of the conduction bands of GdN. A redshift of 0.34 eV of the lower band edge (T=$T_{c}$ $\to$ T=0) is obtained and found in close comparison with earlier theoretical prediction and experimental value reported in the literature.

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A. Sharma, W. Nolting. 2006-06-26. Temperature dependent electronic correlation effects in GdN. https://doi.org/10.1088/0953-8984%2F18%2F31%2F026

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