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Shot noise of a multiwalled carbon nanotube field effect transistor

F. Wu·T. Tsuneta·R. Tarkiainen·D. Gunnarsson·T. H. Wang·P. J. Hakonen
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Abstract

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $μ$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $μ{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.

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F. Wu, T. Tsuneta, R. Tarkiainen, D. Gunnarsson, T. H. Wang, P. J. Hakonen. 2006-07-01. Shot noise of a multiwalled carbon nanotube field effect transistor. https://doi.org/10.1103/physrevb.75.125419

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