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Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

J. Moser·M. Zenger·C. Gerl·D. Schuh·R. Meier·P. Chen·G. Bayreuther·W. Wegscheider·D. Weiss·C. -H. Lai·R. -T. Huang·M. Kosuth·H. Ebert
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Abstract

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.

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J. Moser, M. Zenger, C. Gerl, D. Schuh, R. Meier, P. Chen, G. Bayreuther, W. Wegscheider, D. Weiss, C. -H. Lai, R. -T. Huang, M. Kosuth, H. Ebert. 2006-07-26. Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions. https://doi.org/10.1063/1.2364163

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