Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

S. Masubuchi; K. Hamaya; T. Machida

doi:10.1063/1.2387895

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Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

S. Masubuchi·K. Hamaya·T. Machida

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Abstract

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.

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S. Masubuchi, K. Hamaya, T. Machida. 2006-08-10. Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device. https://doi.org/10.1063/1.2387895

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