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Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

A. de Visser·L. A. Ponomarenko·G. Galistu·D. T. N. de Lang·A. M. M. Pruisken·U. Zeitler·D. Maude
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Abstract

High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor $ν_{c}$ ~ 0.5 follows the universal scaling law $ρ_{xx}(ν, T) \propto exp[-Δν/(T/T_{0})^κ]$, where $Δν=ν-ν_{c}$. The critical exponent $κ$ equals $0.56 \pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.

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A. de Visser, L. A. Ponomarenko, G. Galistu, D. T. N. de Lang, A. M. M. Pruisken, U. Zeitler, D. Maude. 2006-08-22. Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime. https://doi.org/10.1088/1742-6596%2F51%2F1%2F088

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