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Probe to properties of MgB2 thick film on silicon carbide substrate

Fen Li·Tao Guo·Kaicheng Zhang·Li-ping Chen·Chinping Chen·Qing-rong Feng
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Abstract

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature TC above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density JC, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA/cm2 in self field at 10 K.

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Fen Li, Tao Guo, Kaicheng Zhang, Li-ping Chen, Chinping Chen, Qing-rong Feng. 2006-08-25. Probe to properties of MgB2 thick film on silicon carbide substrate. https://doi.org/10.1088/0953-2048%2F19%2F10%2F015

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