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Bias-induced insulator-metal transition in organic electronics

J. H. Wei·Yijing Yan·S. J. Xie·L. M. Mei
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Abstract

We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is explained with the energy levels crossover that eliminates the Peierls phase and delocalizes the electron states near the threshold voltage. This may account for the experimental observations on the devices that exhibit intrinsic bistable conductance switching with large on-off ratio.

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J. H. Wei, Yijing Yan, S. J. Xie, L. M. Mei. 2007-07-10. Bias-induced insulator-metal transition in organic electronics. https://doi.org/10.1063/1.2756354

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