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Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts

G. Scappucci·L. Di Gaspare·E. Giovine·A. Notargiacomo·R. Leoni·F. Evangelisti
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Abstract

We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a quantization in units of e^2/h, indicative of transport through 1D modes which appear to lack both spin and valley degeneracy.

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G. Scappucci, L. Di Gaspare, E. Giovine, A. Notargiacomo, R. Leoni, F. Evangelisti. 2006-09-06. Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts. https://doi.org/10.1063/1.2730107

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