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Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs

Miron J. Cristea
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Abstract

In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.

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Miron J. Cristea. 2006-09-15. Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs. https://arxiv.org/abs/cond-mat/0609368

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