arXiv subjects
Publications and source records attributed to Miron J. Cristea.
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, medium injection, high injection levels and the ohmic region of the I/V characteristics. Keywords: p-n junctions, current-voltage characteristics, low injection and high injection levels, ohmic region.
Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of diffused semiconductor junctions. The measurement technique for the determination of the built-in voltage is also described.
Based on Gauss's law for the electric field, new integral formulas are deduced. Although the applications are not limited within the physics realm, an application is also presented, for the sake of practicability, specifically in the area of semiconductor junctions.
The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n junctions. They are usually employed for the calculation of the p-n junction current/ voltage characteristic. This work demonstrates that they are valid only at low injection current levels. New analytical expressions for these boundary conditions are obtained for medium and high injection levels. These expressions are verified by calculating the current/ voltage characteristics of p-n junctions operated at high current levels.
Based on semiconductor materials fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused -Gaussian profile- semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions.
In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.