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Electronic structure of graphite/6H-SiC interfaces

Th. Seyller·K. V. Emtsev·F. Speck·K. -Y. Gao·L. Ley
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Abstract

We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

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Th. Seyller, K. V. Emtsev, F. Speck, K. -Y. Gao, L. Ley. 2006-10-09. Electronic structure of graphite/6H-SiC interfaces. https://arxiv.org/abs/cond-mat/0610220

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