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Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

Anne Parge·Tore Niermann·Michael Seibt·Markus Münzenberg
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Abstract

We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.

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Anne Parge, Tore Niermann, Michael Seibt, Markus Münzenberg. 2006-10-10. Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices. https://doi.org/10.1063/1.2717544

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