arXiv · cond-mat/0610401
Doping-driven Mott transition in the one-band Hubbard model
Abstract
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction strengths we are able access low enough temperatures that a reliable extrapolation to temperature T=0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T=0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes at the critical interaction strength of the half filled model. Over wide parameter ranges the compressibility is substantially reduced relative to the non-interacting system. The metal insulator transition is characterized by the appearance of in-gap states, but these are relevant only for very low dopings of less than 3%.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Philipp Werner, Andrew J. Millis. 2007-02-15. Doping-driven Mott transition in the one-band Hubbard model. https://doi.org/10.1103/physrevb.75.085108
Cite the original work for its findings. Save a collection to share your selection of sources.