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Electron-Phonon Interaction in Embedded Semiconductor Nanostructures

Frank Grosse·Roland Zimmermann
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Abstract

The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing {\em ab initio} density functional theory. For a spherical InAs quantum dot embedded in GaAs barrier material, the electron-phonon coupling is calculated. Its strength is shown to be suppressed compared to the assumption of bulk phonons.

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Frank Grosse, Roland Zimmermann. 2006-10-15. Electron-Phonon Interaction in Embedded Semiconductor Nanostructures. https://doi.org/10.1103/physrevb.75.235320

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