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Interlayer exchange coupling in (Ga,Mn)As based multilayers

A. D. Giddings·T. Jungwirth·B. L. Gallagher
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Abstract

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.

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A. D. Giddings, T. Jungwirth, B. L. Gallagher. 2006-10-25. Interlayer exchange coupling in (Ga,Mn)As based multilayers. https://doi.org/10.1002/pssc.200672834

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