arXiv · cond-mat/0611779
Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions
Abstract
Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20 K reflects a rather weak influence of temperature. The dependence on the voltage drop shows an unusual behavior with two almost symmetric peaks at $\pm600$ mV with large inverse TMR ratios and small positive values around zero bias.
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A. D. Rata, H. Braak, D. E. Buergler, C. M. Schneider. 2006-11-30. Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions. https://doi.org/10.1063/1.2728034
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