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Hidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness

Robert G. Leigh·Philip Phillips·Ting-Pong Choy
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Abstract

We construct the low energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi_2Sr_2CaCu_2O_{8+δ} (Pb2212).

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Robert G. Leigh, Philip Phillips, Ting-Pong Choy. 2007-07-12. Hidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness. https://doi.org/10.1103/physrevlett.99.046404

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