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Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

D. A. Knyazev·O. E. Omelyanovskii·V. M. Pudalov·I. S. Burmistrov
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Abstract

We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the ρ(T,B) data and the RG theory in a wide range of the in-plane fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.

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D. A. Knyazev, O. E. Omelyanovskii, V. M. Pudalov, I. S. Burmistrov. 2006-12-15. Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition. https://doi.org/10.1134/s0021364006240064

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