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Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

K. Eng·R. N. McFarland·B. E. Kane
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Abstract

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.

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K. Eng, R. N. McFarland, B. E. Kane. 2007-05-14. Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface. https://doi.org/10.1103/physrevlett.99.016801

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