arXiv subjects

B. E. Kane

Publications and source records attributed to B. E. Kane.

At least 19 recordsLinked to original sources

arXiv2026

Microfabricated Au and Au/graphene bilayer platelets for levitation experiments

We describe a fabrication process for preparing liquid suspensions of micron-scale Au and Au/graphene bilayer platelets using thin-film deposition, optical lithography, ion milling, hydrofluoric acid (HF) substrate etching, and release from the substrate into a liquid suspension. Residual HF is removed through repeated centrifugation, decanting, and dilution cycles. The resulting suspension is characterized by electrospray deposition onto a secondary substrate, followed by electron and atomic force microscopy. The deposited platelets exhibit minimal aggregation, and the overall platelet yield reaches up to 30% of the platelets originally patterned on the wafer. Lateral force microscopy further confirms that the Au/graphene bilayer remains intact throughout fabrication, release, and electrospray deposition. This process provides a practical route for preparing high-quality platelet suspensions for levitated nanoparticle experiments and other applications requiring suspensions of two-dimensional nanostructures.

cond-mat.mes-hall↗

arXiv2026

Carbon encapsulation of levitated Au nanoparticles

We investigate the formation of a barrier to evaporation that develops when levitated nanoscale Au nanoparticles are exposed to pulses of 532 nm laser radiation in a high vacuum (pressure $p=10^{-8}-10^{-7}$ Torr) environment. Our data are derived from precision measurements of the charge to mass ratio ($Q/M$) of $\sim$200 nm diameter Au particles confined in a quadrupole ion trap. We characterize the development of the barrier over time as the particle is repeatedly heated with laser pulses and determine the impact of variations of the interval between pulses and of exposure to several gases added to the vacuum chamber. We observe a slow increase in the mass of particles upon prolonged exposure to the vacuum, which we attribute to the growth of a barrier layer. For particles that have acquired a barrier during exposure to CO, we observe a rapid decrease in their mass upon subsequent exposure to O$_2$. These findings are consistent with the growth and subsequent oxidation of a graphene layer on the Au that forms the barrier to evaporation. However, we have not found that the rate of formation of the barrier depends on the pressure of carbon-containing gases (CO, C$_2$H$_4$, CO$_2$) we have added to the chamber. We hypothesize that a rare surface state on the solid Au particle catalyzes the reaction that introduces C to the particle. Repeated laser pulse heating is necessary--either to enable diffusion away from this state or to create fresh states that allow continued C uptake--to facilitate the growth of the surface graphene layer.

cond-mat.mes-hall↗

arXiv2026

Collection, characterization, and precision measurement of levitated charged nanoparticles

We describe apparatus and experimental procedures for high stability precision measurements of levitated nanoscale particles confined in an ion trap in high vacuum. We discuss methods for particle generation and collection using electrospray emission, for rapid characterization by direct imaging of thermal motion, and for transfer of the particle from the trap where it is collected to a separate analysis trap in order to achieve better vacuum and lower noise. In the analysis trap at high vacuum (pressure $p\simeq10^{-8}$ Torr), we employ thermostatic control of the trapped particle oscillation amplitudes, allowing long-term, precision measurements of oscillation frequencies, from which the charge to mass ratio ($Q/M$) can be deduced. Under these conditions, we achieve $Q/M$ measurement precision approaching $10^{-5}$. This sensitivity will enable, for example, investigations of the surface chemistry of $μ$m-scale levitated materials in ultra-high vacuum environments.

cond-mat.mes-hall↗

arXiv2024

Focused deposition of levitated nanoscale Au droplets

We describe a method for depositing nanoscale liquid Au droplets, initially levitated in an ion trap in high vacuum, onto a remote substrate. A levitated Au nanosphere is melted, expelled from the trap, and maintained in the molten state with a laser directed along the droplet trajectory until it reaches the substrate and rapidly solidifies. Also during transit, the charged droplets are focused to a small region of the substrate with an electrostatic lens. After deposition, the substrate can be removed from the vacuum chamber and imaged and analyzed by techniques such as electron microscopy and energy dispersive spectroscopy. Over 90% of launched particles are deposited on the substrate, and when the lens is focused, particles land in a region of diameter 120 $μ$m after traversing a distance of 236 mm. Our technique is of value for analysis of materials prepared or processed while levitated that can be melted. Also, Au droplets may be useful as tracers for future experiments involving smaller projectiles or oriented solids.

cond-mat.mes-hall↗

arXiv2022

Observation of undercooling in a levitated nanoscale liquid Au droplet

We investigate melting and undercooling in nanoscale (radius ~100 nm) gold particles that are levitated in a quadrupole ion (Paul) trap in a high vacuum environment. The particle is heated via laser illumination and probed using two main methods. Firstly, measurements of its mass are used to determine the evaporation rate during illumination and infer the temperature of the particle. Secondly, direct optical measurements show that the light scattered from the particle is significantly different in its liquid and solid phases. The particle is repeatedly heated across its melting transition, and the dependence of heating behavior on particle size is investigated. Undercooling -- the persistence of a liquid state below the melting temperature -- is induced via multi-stage laser pulses. The extent of undercooling is explored and compared to theoretical predictions.

cond-mat.mes-hall↗

arXiv2017

A dual-trap system for the study of charged rotating graphene nanoplatelets in high vacuum

We discuss the design and implementation of a system for generating charged multilayer graphene nanoplatelets and introducing a nanoplatelet into a quadrupole ion trap in high vacuum. Levitation decouples the platelet from its environment and enables sensitive mechanical and magnetic measurements. The platelets are generated via liquid exfoliation of graphite pellets and charged via electrospray ionization. A single platelet is trapped at a pressure of several hundred millitorr and transferred to a trap in a second chamber, which is pumped to UHV pressures for further study.

physics.ins-det↗

arXiv2016

Optical and magnetic measurements of gyroscopically stabilized graphene nanoplatelets levitated in an ion trap

Using optical measurements, we demonstrate that the rotation of micron-scale graphene nanoplatelets levitated in a quadrupole ion trap in high vacuum can be frequency locked to an applied radio frequency (rf) electric field. Over time, frequency locking stabilizes the nanoplatelet so that its axis of rotation is normal to the nanoplatelet and perpendicular to the rf electric field. We observe that residual slow dynamics of the direction of the axis of rotation in the plane normal to the rf electric field are determined by an applied magnetic field. We present a simple model that accurately describes our observations. From our data and model we can infer both a diamagnetic polarizability and a magnetic moment proportional to the frequency of rotation, which we compare to theoretical values. Our results establish that trapping technologies have applications for materials measurements at the nanoscale.

cond-mat.mes-hall↗

arXiv2015

Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces

We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole system (2DHS) can be populated in the same conduction channel by changing the gate voltage of a global gate applied through a vacuum gap. Depending on the gate bias, ion implanted n$^+$ and p$^+$ regions function either as Ohmic contacts or as in-plane gates, which laterally confine the carriers induced by the global gate. On one device, electron and hole densities of up to $7.8\times10^{11}$ cm$^{-2}$ and $7.6\times10^{11}$ cm$^{-2}$ respectively are obtained. The peak electron mobility is $1.76\times10^5$ cm$^{2}$/Vs, and the peak hole mobility is $9.1\times10^3$ cm$^{2}$/Vs at 300 mK; the ratio of about 20 is mainly due to the very different valley degeneracies (6:1) of electrons and holes on the Si(111) surface. On another device, the peak electron mobility of $2.2\times10^5$ cm$^{2}$/Vs is reached at 300 mK. These devices are hexagonal in order to investigate the underlying symmetry of the 2DESs, which have a sixfold valley degeneracy at zero magnetic field. Three magnetoresistance measurements with threefold rotational symmetry are used to determine the symmetry of the 2DESs at different magnetic field. At filling factor $1 < ν< 2$, the observed anisotropy can be explained by a single valley pair occupancy of composite fermions (CFs). Qualitatively the CFs preserve the valley anisotropy, in addition to the twofold valley degeneracy. At magnetic field up to 35 T, the 2/3 fractional quantum Hall state is observed with a well developed hall plateau; at $ν<2/3$, the three magnetoresistances show a large anisotropy (50:1). We also show that device degradation is not a serious issue for our measurements, if the device is kept in vacuum or a nitrogen gas environment and its time in air is minimized.

cond-mat.str-el↗

arXiv2015

Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility ($\sim 18$ m$^2$/Vs) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using RPA screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder.

cond-mat.mes-hall↗

arXiv2015

Cooling of Levitated Graphene Nanoplatelets in High Vacuum

We demonstrate cooling of the center of mass motion of charged graphene nanoplatelets levitated in a quadrupole ion trap in high vacuum down to temperatures of 20 K. Parametric feedback based on optical measurements of particle motion was used to achieve the particle cooling at pressure $p<10^{-6}$ Torr, and cooling along all three axes of motion was observed. Dependence of cooling on the electric fields was measured by varying DC voltages on a set of auxiliary electrodes used to spatially shift the trap minimum. Methods to calibrate mass and charge of the nanoplatelet by measuring its motion frequency dependence on discharge were also explored.

cond-mat.mes-hall↗

arXiv2014

Valley Degenerate 2D Electrons in the Lowest Landau Level

We report low temperature magnetotransport measurements on a high mobility (μ=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe the integral quantum Hall effect at all filling factors ν<=6 and find that ν=2 develops in an unusually narrow temperature range. An extended, exclusively even numerator, fractional quantum Hall hierarchy occurs surrounding ν=3/2, consistent with two-fold valley-degenerate composite fermions (CFs). We determine activation energies and estimate the CF mass.

cond-mat.mes-hall↗

arXiv2012

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$ cm$^{-2}$ are obtained, and the peak hole mobility is about $10^4$ cm$^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.

cond-mat.mes-hall↗

arXiv2010

Levitated Spinning Graphene

A method is described for levitating micron-sized few layer graphene flakes in a quadrupole ion trap. Starting from a liquid suspension containing graphene, charged flakes are injected into the trap using the electrospray ionization technique and are probed optically. At micro-torr pressures, torques from circularly polarized light cause the levitated particles to rotate at frequencies >1 MHz, which can be inferred from modulation of light scattering off the rotating flake when an electric field resonant with the rotation rate is applied. Possible applications of these techniques will be presented, both to fundamental measurements of the mechanical and electronic properties of graphene and to new approaches to graphene crystal growth, modification and manipulation.

cond-mat.mes-hall↗

arXiv2009

Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho_{xx} displays strong temperature dependence for 0.07 < T < 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi liquid theory, but a small residual drag as T->0 remains unexplained.

cond-mat.mes-hall↗

arXiv2009

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.

cond-mat.mes-hall↗

arXiv2007

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.

cond-mat.mes-hall↗

arXiv2007

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.

cond-mat.mes-hall↗

arXiv2006

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si/SiO_2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface.

cond-mat.mes-hall↗