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Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution

I. H. Inoue·S. Yasuda·H. Akinaga·H. Takagi
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Abstract

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.

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I. H. Inoue, S. Yasuda, H. Akinaga, H. Takagi. 2007-02-26. Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution. https://doi.org/10.1103/physrevb.77.035105

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