arXiv subjects

I. H. Inoue

Publications and source records attributed to I. H. Inoue.

15 recordsLinked to original sources

arXiv2008

Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.

cond-mat.mtrl-sci↗

arXiv2007

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.

cond-mat.other↗

arXiv2007

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.

cond-mat.str-el↗

arXiv2006

Low temperature metallic state induced by electrostatic carrier doping of SrTiO$_3$

Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$Ω$ at low temperatures, with carrier mobility exceeding 1000 cm$^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior ($dR$/$dT$ $>$ 0). Our results demonstrate an insulator to metal transition in SrTiO$_3$ driven by electrostatic carrier density control.

cond-mat.str-el↗

arXiv2005

Bulk and surface-sensitive high-resolution photoemission study of Mott-Hubbard systems SrVO$_3$ and CaVO$_3$

We study the electronic structure of Mott-Hubbard systems SrVO$_{3}$ and CaVO$_3$ with bulk and surface-sensitive high-resolution photoemission spectroscopy (PES), using a VUV laser, synchrotron radiation and a discharge lamp ($hν$ = 7 - 21 eV). A systematic suppression of the density of states (DOS) within $\sim$ 0.2 eV of the Fermi level ($E_F$) is found on decreasing photon energy i.e. on increasing bulk sensitivity. The coherent band in SrVO$_{3}$ and CaVO$_3$ is shown to consist of surface and bulk derived features, separated in energy. The stronger distortion on surface of CaVO$_{3}$ compared to SrVO$_{3}$ leads to higher surface metallicity in the coherent DOS at $E_F$, consistent with recent theory.

cond-mat.str-el↗

arXiv2005

Understanding the bulk electronic structure of Ca1-xSrxVO3

We investigate the electronic structure of Ca1-xSrxVO3 using careful state-of-the-art experiments and calculations. Photoemission spectra using synchrotron radiation reveal a hitherto unnoticed polarization dependence of the photoemission matrix elements for the surface component leading to a substantial suppression of its intensity. Bulk spectra extracted with the help of experimentally determined electron escape depth and estimated suppression of surface contributions resolve outstanding puzzles concerning the electronic structure in Ca1-xSrxVO3.

cond-mat.str-el↗

arXiv2003

Field Effect Transistor Based on KTaO3 Perovskite

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.

cond-mat.str-el↗

arXiv2003

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.

cond-mat.str-el↗

arXiv2002

High-Field Properties of Single-Crystalline Cavo3

The magnetic properties of perovskite CaVO3 single crystals have been studied by means of magnetoresistance r(T, H) and magnetization M(H) measurements in fields to 18T. At 2 K, the magnetoresistance is positive and a maximum value of Dr(18T)/r(0) = 16.5% is found for H//a. The magnetization exhibits a smooth increase at 2 K, reaching values of M(18T) = 0.03, 0.05, 0.17 mB/f.u. for H//a, H//b, and H//c, respectively. This anisotropy found in M(H) is consistent with that observed for Dr(H//a) > Dr(H//b) > Dr(H//c). These results can be interpreted in terms of the field-dependent scattering mechanism of CaVO3.

cond-mat.str-el↗

arXiv2002

Fermi Surface of 3d^1 Perovskite CaVO3 Near the Mott Transition

We present a detailed de Haas van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement -- but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.

cond-mat.str-el↗

arXiv2001

Electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$: a tale of two energy-scales

We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to understand properties related to two vastly differing energy-scales, namely the low energy-scale of thermal excitations (~$k_{B}T$) and the high-energy scale related to Coulomb and other electronic interactions.

cond-mat.str-el↗

arXiv2001

Penetration Depth Measurements in MgB_2: Evidence for Unconventional Superconductivity

We have measured the magnetic penetration depth of the recently discovered binary superconductor MgB_2 using muon spin rotation and low field $ac$-susceptibility. From the damping of the muon precession signal we find the penetration depth at zero temperature is about 85nm. The low temperature penetration depth shows a quadratic temperature dependence, indicating the presence of nodes in the superconducting energy gap.

cond-mat.supr-con↗

arXiv1998

Band-width control in a perovskite-type 3d^1 correlated metal Ca_1-xSr_xVO_3. II. Optical spectroscopy investigation

Optical conductivity spectra of single crystals of Ca_1-xSr_xVO_3 have been studied to elucidate how the electronic behavior depends on the strength of the electron correlation without changing the nominal number of electrons per vanadium atom. The effective mass deduced by the analysis of the Drude-like contribution do not show critical enhancement, even though the system is close to the Mott transition. Besides the Drude-like contribution, two anomalous features were observed in the optical conductivity spectra of the intraband transition within the 3d band. These features can be assigned to transitions involving the incoherent and coherent bands near the Fermi level. The large spectral weight redistribution in this system, however, does not involve a large mass enhancement.

cond-mat.str-el↗

arXiv1998

Band-width control in a perovskite-type 3d^1 correlated metal Ca_{1-x}Sr_xVO_3. I. Evolution of the electronic properties and effective mass

Single crystals of the perovskite-type $3d^{1}$ metallic alloy system Ca$_{1-x}$Sr$_x$VO$_3$ were synthesized in order to investigate metallic properties near the Mott transition. The substitution of a Ca$^{2+}$ ion for a Sr$^{2+}$ ion reduces the band width $W$ due to a buckling of the V-O-V bond angle from $\sim180^\circ$ for SrVO$_3$ to $\sim160^\circ$ for CaVO$_3$. Thus, the value of $W$ can be systematically controlled without changing the number of electrons making Ca$_{1-x}$Sr$_x$VO$_3$: one of the most ideal systems for studying band-width effects. The Sommerfeld-Wilson's ratio ($\simeq2$), the Kadowaki-Woods ratio (in the same region as heavy Fermion systems), and a large $T^{2}$ term in the electric resistivity, even at 300 K, substantiate a large electron correlation in this system, though the effective mass, obtained by thermodynamic and magnetic measurements, shows only a systematic but moderate increase in going from SrVO$_3$ to CaVO$_3$, in contrast to the critical enhancement expected from the Brinkmann-Rice picture. It is proposed that the metallic properties observed in this system near the Mott transition can be explained by considering the effect of a non-local electron correlation.

cond-mat.str-el↗

arXiv1996

Low frequency spectroscopy of the correlated metallic system $Ca_xSr_{1-x}VO_3$

We study the photoemission and optical conductivity response of the strongly correlated metallic system $Ca_xSr_{1-x}VO_3$. We find that the basic features of the transfer of spectral weight in photoemission experiments and the unusual lineshape of the optical response can be understood by modeling the system with a one band Hubbard model close to the Mott-Hubbard transition. We present a detailed comparison between the low frequency experimental data and the corresponding theoretical predictions obtained within the LISA method that is exact in the limit of large lattice connectivity.

cond-mat↗