Resonant tunneling diode with spin polarized injector

A. Slobodskyy; C. Gould; T. Slobodskyy; G. Schmidt; L. W. Molenkamp; D. Sanchez

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arXiv · cond-mat/0703574

Resonant tunneling diode with spin polarized injector

A. Slobodskyy·C. Gould·T. Slobodskyy·G. Schmidt·L. W. Molenkamp·D. Sanchez

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Abstract

We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth.

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A. Slobodskyy, C. Gould, T. Slobodskyy, G. Schmidt, L. W. Molenkamp, D. Sanchez. 2007-03-22. Resonant tunneling diode with spin polarized injector. https://arxiv.org/abs/cond-mat/0703574

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