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Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

T. Jungwirth·L. Smrcka
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Abstract

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.

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T. Jungwirth, L. Smrcka. 1995-01-11. Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields. https://doi.org/10.1103/physrevb.51.10181

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