Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering

K. Kalna; M. Mosko; F. M. Peeters

doi:10.1063/1.116207

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Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering

K. Kalna·M. Mosko·F. M. Peeters

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Abstract

Electron capture times in a separate confinement quantum well (QW) structure with finite electron density are calculated for electron-electron (e-e) and electron-polar optic phonon (e-pop) scattering. We find that the capture time oscillates as function of the QW width for both processes with the same period, but with very different amplitudes. For an electron density of 10^11 cm^-2 the e-e capture time is 10-1000 times larger than the e-pop capture time except for QW widths near the resonance minima, where it is only 2-3 times larger. With increasing electron density the e-e capture time decreases and near the resonance becomes smaller than the e-pop capture time. Our e-e capture time values are two-to-three orders of magnitude larger than previous results of Blom et al. [Appl. Phys. Lett. 62, 1490 (1993)]. The role of the e-e capture in QW lasers is therefore readdressed.

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K. Kalna, M. Mosko, F. M. Peeters. 1995-11-15. Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering. https://doi.org/10.1063/1.116207

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