Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings is developed and applied to a spin field effect transistor (spinFET) operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a \SI{25}{nm} gate length \chem{In_{0.7}Ga_{0.3}As} metal-oxide-semiconductor field-effect transistor (MOSFET) with a CMOS compatible architecture. We observe non-uniform decay of the net magnetization between the source and gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and drain. We demonstrate coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current is strain-sensitive and can be increased twofold by strain induced into the channel.