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Stokes shift in quantum wells: trapping versus thermalization

A. Polimeni·A. Patanè·M. Grassi Alessi·M. Capizzi·F. Martelli·A. Bosacchi·S. Franchi
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Abstract

Low temperature photoluminescence and photoluminescence excitation measurements have been performed in a set of InGaAs/GaAs samples with different indium molar fraction, well width, growth conditions and post-growth treatment. This has allowed to change in a controlled way the degree and source of disorder in the samples, thus resulting in an excitonic absorption linewidth varying between 1 and 18 meV, and an ensueing Stokes shift changing between zero and 8 meV. The conditions of validity of two different models relating the Stokes shift to the linewidth broadening have been established in terms of different regimes of disorder and temperature. A continuous transition between those regimes has been demonstrated.

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A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, S. Franchi. 1996-09-17. Stokes shift in quantum wells: trapping versus thermalization. https://doi.org/10.1103/physrevb.54.16389

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