arXiv · cond-mat/9702196
Cotunneling at resonance for the single-electron transistor
Abstract
We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.
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Jürgen König, Herbert Schoeller, Gerd Schön. 1997-02-21. Cotunneling at resonance for the single-electron transistor. https://doi.org/10.1103/physrevlett.78.4482
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