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Parity Effect and Charge Binding Transition in Submicron Josephson Junction Arrays

M. V. Feigel'man·S. E. Korshunov·A. B. Pugachev
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Abstract

We reconsider the issue of Berezinskii-Kosterlitz-Thouless (BKT) transition into an insulating state in the Coulomb-dominated Josephson junction arrays. We show that previously predicted picture of the Cooper-pair BKT transtion at T = T_2 is valid only under the condition that T_2 is considerably below the parity-effect temperature (which is usually almost 10 times below the value of superconductive transition temperature), and even in this case it is not a rigorous phase transition but only a crossover, whereas the real phase transition takes place at T_1 = T_2/4. Our theory is in agreement with available experimental data on Coulomb-dominated Josephson arrays and also sheds some light on the origin of unusual reentrant temperature dependence of resistivity in the array with nearly-criticial ratio of Coulomb to Josephson energies.

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M. V. Feigel'man, S. E. Korshunov, A. B. Pugachev. 1997-03-18. Parity Effect and Charge Binding Transition in Submicron Josephson Junction Arrays. https://doi.org/10.1134/1.567397

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