arXiv · cond-mat/9707247
Damping of Growth Oscillations in Molecular Beam Epitaxy: A Renormalization Group Approach
Abstract
The conserved Sine-Gordon Equation with nonconserved shot noise is used to model homoepitaxial crystal growth. With increasing coverage the renormalized pinning potential changes from strong to weak. This is interpreted as a transition from layer-by-layer to rough growth. The associated length and time scales are identified, and found to agree with recent scaling arguments. A heuristically postulated nonlinear term $\nabla^2 (\nabla h)^2$ is created under renormalization.
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Martin Rost, Joachim Krug. 1997-07-23. Damping of Growth Oscillations in Molecular Beam Epitaxy: A Renormalization Group Approach. https://doi.org/10.1051/jp1%3A1997105
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