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Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices

T. Jungwirth·A. H. MacDonald
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Abstract

Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck effects and can be used to calculate their overall resistance and magnetoresistance. The model permits a simple understanding of the dependence of device magnetoresistance on spin diffusion lengths, tunneling magnetoresistance, and majority and minority spin resistivities in the ferromagnetic electrodes. The circuit model is in a good quantitative agreement with detailed transport calculations.

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T. Jungwirth, A. H. MacDonald. 1998-01-14. Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices. https://doi.org/10.1016/s0038-1098(98)00357-3

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