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Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

D. Chouvaev·L. S. Kuzmin·D. S. Golubev·A. D. Zaikin
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Abstract

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$Ω$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.

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D. Chouvaev, L. S. Kuzmin, D. S. Golubev, A. D. Zaikin. 1998-03-02. Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor. https://doi.org/10.1103/physrevb.59.10599

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