arXiv · cond-mat/9803037
Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression
Abstract
Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $τ_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
V. Kravchenko, N. Minina, A. Savin, C. B. Sorensen, O. P. Hansen, W. Kraak. 1998-03-03. Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression. https://doi.org/10.1103/physrevb.59.2376
Cite the original work for its findings. Save a collection to share your selection of sources.