Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression
Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $τ_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.
cond-mat.mtrl-sci↗