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Noise in Al single electron transistors of stacked design

V. A. Krupenin·D. E. Presnov·M. N. Savvateev·H. Scherer·A. B. Zorin·J. Niemeyer
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Abstract

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5 - 7)*10E-5 e/sqrt(Hz) at f = 10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.

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V. A. Krupenin, D. E. Presnov, M. N. Savvateev, H. Scherer, A. B. Zorin, J. Niemeyer. 1998-04-17. Noise in Al single electron transistors of stacked design. https://doi.org/10.1063/1.368474

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