arXiv · cond-mat/9807327
Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors
Abstract
Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when $% r_s=a_B^{*}$. On the basis of this result a new mechanism of shallow impurity electric field break down in semiconductors is suggested.
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O. Z. Alekperov. 1998-07-24. Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors. https://doi.org/10.1088/0953-8984%2F10%2F38%2F012
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